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Home > Products > Transistors > IGBTs > ///NGB8207ABNT4G

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NGB8207ABNT4GQuantity:15538

Part No NGB8207ABNT4G
Manufacturer onsemi
Description INSULATED GATE BIPOLAR TRANSISTO
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Voltage-CollectorEmitterBreakdown(Max)365 V
SwitchingEnergy-
OperatingTemperature-
ProductStatusActive
Package/CaseD2PAK
Grade-55°C ~ 175°C (TJ)
MountingTypeTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
ReverseRecoveryTime(trr)
Current-CollectorPulsed(Icm)
Series-
Td(on/off)@25°C-
QualificationSurface Mount
SupplierDevicePackage
InputTypeLogic
Vce(on)(Max)@Vge50 A
GateCharge-
Current-Collector(Ic)(Max)20 A
Ic2.2V @ 3.7V, 10A
TestCondition-
PackageBulk
Power-Max165 W
IGBTType-

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