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MSCSM120DAM31CTBL1NGQuantity:3258

Part No MSCSM120DAM31CTBL1NG
Manufacturer Microchip Technology
Description PM-MOSFET-SIC-SBD-BL1
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
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Specifications

RdsOn(Max)@Id2.8V @ 1mA
Vgs(th)(Max)@Id+25V, -10V
Vgs232 nC @ 20 V
FETFeature310W
DraintoSourceVoltage(Vdss)1200 V
OperatingTemperatureChassis Mount
DriveVoltage(MaxRdsOn20V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingType-
InputCapacitance(Ciss)(Max)@Vds-
Series-
Qualification
SupplierDevicePackageModule
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
Current-ContinuousDrain(Id)@25°C79A
Vgs(Max)3020 pF @ 1000 V
MinRdsOn)31mOhm @ 40A, 20V
PackageBulk
PowerDissipation(Max)-55°C ~ 175°C (TJ)

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