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Home > Products > Transistors > Bipolar (BJT) > ///MJD112T4G

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MJD112T4GQuantity:30001

Part No MJD112T4G
Manufacturer onsemi
Description TRANS NPN DARL 100V 2A DPAK
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Voltage-CollectorEmitterBreakdown(Max)100 V
VceSaturation(Max)@Ib3V @ 40mA, 4A
OperatingTemperatureTO-252-3, DPak (2 Leads + Tab), SC-63
ProductStatusActive
Package/Case-
TransistorTypeNPN - Darlington
Grade
MountingTypeDPAK
Current-CollectorCutoff(Max)1000 @ 2A, 3V
Series-
DCCurrentGain(hFE)(Min)@Ic20 W
Frequency-TransitionSurface Mount
Qualification
SupplierDevicePackage-
Vce25MHz
Current-Collector(Ic)(Max)2 A
Ic20µA
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
Power-Max-65°C ~ 150°C (TJ)

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