Images are for reference only.
See Product Specifications for product details.
Buy IRF520NLPBF with confidence from acme-chip.com, 1 Year Warranty
See Product Specifications for product details.
Buy IRF520NLPBF with confidence from acme-chip.com, 1 Year Warranty
IRF520NLPBFQuantity:6225
| Part No | IRF520NLPBF |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | MOSFET N-CH 100V 9.7A TO262 |
| Lead Free Status / RoHS Status | Contains lead /RoHS non-compliant |
| Datasheets |
Specifications
| RdsOn(Max)@Id | 4V @ 250µA |
|---|---|
| Vgs(th)(Max)@Id | ±20V |
| Vgs | 25 nC @ 10 V |
| FETFeature | 3.8W (Ta), 48W (Tc) |
| DraintoSourceVoltage(Vdss) | 100 V |
| OperatingTemperature | Through Hole |
| DriveVoltage(MaxRdsOn | 10V |
| ProductStatus | Obsolete |
| Package/Case | |
| GateCharge(Qg)(Max)@Vgs | |
| Grade | |
| MountingType | TO-262 |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | HEXFET® |
| Qualification | |
| SupplierDevicePackage | TO-262-3 Long Leads, I2PAK, TO-262AA |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 9.7A (Tc) |
| Vgs(Max) | 330 pF @ 25 V |
| MinRdsOn) | 200mOhm @ 5.7A, 10V |
| Package | Tube |
| PowerDissipation(Max) | -55°C ~ 175°C (TJ) |
Introduce
We can supply IRF520NLPBF , send us a request quote to request IRF520NLPBF pirce and lead time. acme-chip.com a professional electronic components distributor. With 10+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IRF520NLPBF.The price and lead time for IRF520NLPBF depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part IRF520NLPBF.We look forward to working with you to establish long-term relations of cooperation
Related parts for IRF520NLPBF
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
IRF50N06 | SSS | TO-220 | RFQ >> |
 |
IRF510 | Vishay Siliconix | MOSFET N-CH 100V 5.6A TO220AB | RFQ >> |
 |
IRF510A | Fairchild Semiconductor | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | RFQ >> |
 |
IRF510L | Vishay Siliconix | MOSFET N-CH 100V 5.6A TO262-3 | RFQ >> |
|
IRF510N | International Rectifier | TO220 | RFQ >> |
|
IRF510NPBF | International Rectifier | TO-220 | RFQ >> |
|
IRF510PBF | Vishay Siliconix | MOSFET N-CH 100V 5.6A TO220AB | RFQ >> |
 |
IRF510PBF-BE3 | Vishay Siliconix | MOSFET N-CH 100V 5.6A TO220AB | RFQ >> |
|
IRF510S | Vishay Intertech | - | RFQ >> |
 |
IRF510S | Vishay Siliconix | MOSFET N-CH 100V 5.6A D2PAK | RFQ >> |
|
IRF510SPBF | Vishay Siliconix | MOSFET N-CH 100V 5.6A D2PAK | RFQ >> |
|
IRF510STRL | Vishay Siliconix | MOSFET N-CH 100V 5.6A D2PAK | RFQ >> |
|
IRF510STRLPBF | Vishay Siliconix | MOSFET N-CH 100V 5.6A D2PAK | RFQ >> |
|
IRF510STRR | Vishay Siliconix | MOSFET N-CH 100V 5.6A D2PAK | RFQ >> |
|
IRF510STRRPBF | Vishay Intertech | - | RFQ >> |
|
IRF510STRRPBF | Vishay Siliconix | MOSFET N-CH 100V 5.6A TO263 | RFQ >> |
|
IRF511 | MOTOROLA | RFQ >> | |
|
IRF512 | Harris | N-CHANNEL POWER MOSFET | RFQ >> |
 |
IRF512S2532 | Harris Corporation | 4.9A, 100V, 0.74 OHM, N-CHANNEL | RFQ >> |
|
IRF513 | International Rectifier | TO-220 | RFQ >> |
 |
IRF520 | STMicroelectronics | MOSFET N-CH 100V 10A TO220AB | RFQ >> |
|
IRF520 | Vishay Siliconix | MOSFET N-CH 100V 9.2A TO220AB | RFQ >> |
|
IRF520A | Fairchild Semiconductor | Compliant Through Hole 28 ns 14 ns TO-220AB 45 W 1 36 ns | RFQ >> |
|
IRF520FI | ST | TO-220F | RFQ >> |
 |
IRF520N | Infineon Technologies | MOSFET N-CH 100V 9.7A TO220AB | RFQ >> |
|
IRF520NL | Infineon Technologies | MOSFET N-CH 100V 9.7A TO262 | RFQ >> |
|
IRF520NLPBF | Infineon Technologies | MOSFET N-CH 100V 9.7A TO262 | RFQ >> |
|
IRF520NPBF | Infineon Technologies | MOSFET N-CH 100V 9.7A TO220AB | RFQ >> |
 |
IRF520NS | Infineon Technologies | MOSFET N-CH 100V 9.7A D2PAK | RFQ >> |
|
IRF520NSPBF | Infineon Technologies | MOSFET N-CH 100V 9.7A D2PAK | RFQ >> |
|
IRF520NSTRL | Infineon Technologies | MOSFET N-CH 100V 9.7A D2PAK | RFQ >> |
|
IRF520NSTRLPBF | Infineon Technologies | MOSFET N-CH 100V 9.7A D2PAK | RFQ >> |
|
IRF520NSTRR | Infineon Technologies | MOSFET N-CH 100V 9.7A D2PAK | RFQ >> |
|
IRF520NSTRRPBF | Infineon Technologies | MOSFET N-CH 100V 9.7A D2PAK | RFQ >> |
|
IRF520PBF | Vishay Siliconix | MOSFET N-CH 100V 9.2A TO220AB | RFQ >> |
|
IRF520PBF-BE3 | Vishay Siliconix | MOSFET N-CH 100V 9.2A TO220AB | RFQ >> |
|
IRF520S | Vishay Intertech | - | RFQ >> |
|
IRF520S | Vishay Siliconix | MOSFET N-CH 100V 9.2A D2PAK | RFQ >> |
|
IRF520SPBF | Vishay Intertech | - | RFQ >> |
|
IRF520SPBF | Vishay Siliconix | MOSFET N-CH 100V 9.2A D2PAK | RFQ >> |
|
IRF520STRL | Vishay Siliconix | MOSFET N-CH 100V 9.2A D2PAK | RFQ >> |
|
IRF520STRR | Vishay Siliconix | MOSFET N-CH 100V 9.2A D2PAK | RFQ >> |
|
IRF520V | International Rectifier | Power Field-Effect Transistor, 9.6A I(D), 100V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | RFQ >> |
|
IRF520VL | International Rectifier | TO-262 | RFQ >> |
|
IRF520VPBF | Infineon | Transistor | RFQ >> |
|
IRF520VS | International Rectifier | Power Field-Effect Transistor, 9.6A I(D), 100V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | RFQ >> |
|
IRF520VSPBF | International Rectifier | Compliant Lead Free Bulk D2PAK 9.6 A 3 100 V 9.6 A | RFQ >> |
|
IRF521 | Infineon Technologies | - | RFQ >> |
|
IRF521 | Harris Corporation | N-CHANNEL POWER MOSFET | RFQ >> |
|
IRF5210 | Infineon Technologies | - | RFQ >> |
