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Part No IPS80R1K4P7AKMA1
Manufacturer Infineon Technologies
Description MOSFET N-CH 800V 4A TO251-3
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

RdsOn(Max)@Id3.5V @ 700µA
Vgs(th)(Max)@Id±20V
Vgs10 nC @ 10 V
FETFeature32W (Tc)
DraintoSourceVoltage(Vdss)800 V
OperatingTemperature-
DriveVoltage(MaxRdsOn10V
ProductStatusNot For New Designs
Package/CasePG-TO251-3-11
GateCharge(Qg)(Max)@VgsTO-251-3 Stub Leads, IPak
Grade
MountingType-
InputCapacitance(Ciss)(Max)@Vds-
SeriesCoolMOS™
Qualification
SupplierDevicePackageThrough Hole
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C4A (Tc)
Vgs(Max)-
MinRdsOn)1.4Ohm @ 1.4A, 10V
PackageTube
PowerDissipation(Max)-55°C ~ 150°C (TJ)

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