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Home > Products > Transistors > FETs, MOSFETs > ///IPN50R800CEATMA1

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Part No IPN50R800CEATMA1
Manufacturer Infineon Technologies
Description MOSFET N-CH 500V 7.6A SOT223
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

RdsOn(Max)@Id3.5V @ 130µA
Vgs(th)(Max)@Id±20V
Vgs12.4 nC @ 10 V
FETFeature5W (Tc)
DraintoSourceVoltage(Vdss)500 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn13V
ProductStatusLast Time Buy
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypePG-SOT223
InputCapacitance(Ciss)(Max)@Vds-
SeriesCoolMOS™ CE
Qualification
SupplierDevicePackageTO-261-4, TO-261AA
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C7.6A (Tc)
Vgs(Max)280 pF @ 100 V
MinRdsOn)800mOhm @ 1.5A, 13V
PackageTape & Reel (TR),Cut Tape (CT)
PowerDissipation(Max)-40°C ~ 150°C (TJ)

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