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Home > Products > Transistors > FETs, MOSFETs > ///IPD60N10S4L12ATMA1

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Part No IPD60N10S4L12ATMA1
Manufacturer Infineon Technologies
Description MOSFET N-CH 100V 60A TO252-3
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

RdsOn(Max)@Id2.1V @ 46µA
Vgs(th)(Max)@Id±16V
Vgs49 nC @ 10 V
FETFeature94W (Tc)
DraintoSourceVoltage(Vdss)100 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn4.5V, 10V
ProductStatusActive
Package/CaseAutomotive
GateCharge(Qg)(Max)@VgsAEC-Q101
Grade
MountingTypePG-TO252-3-313
InputCapacitance(Ciss)(Max)@Vds-
SeriesHEXFET®
Qualification
SupplierDevicePackageTO-252-3, DPak (2 Leads + Tab), SC-63
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C60A (Tc)
Vgs(Max)3170 pF @ 25 V
MinRdsOn)12mOhm @ 60A, 10V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)-55°C ~ 175°C (TJ)

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