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Home > Products > Transistors > FETs, MOSFETs > ///IPD30N03S4L14ATMA1

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Part No IPD30N03S4L14ATMA1
Manufacturer Infineon Technologies
Description MOSFET N-CH 30V 30A TO252-3
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

RdsOn(Max)@Id2.2V @ 10µA
Vgs(th)(Max)@Id±16V
Vgs14 nC @ 10 V
FETFeature31W (Tc)
DraintoSourceVoltage(Vdss)30 V
OperatingTemperature-
DriveVoltage(MaxRdsOn4.5V, 10V
ProductStatusActive
Package/CasePG-TO252-3-11
GateCharge(Qg)(Max)@VgsTO-252-3, DPak (2 Leads + Tab), SC-63
Grade
MountingType-
InputCapacitance(Ciss)(Max)@Vds-
SeriesOptiMOS™
Qualification
SupplierDevicePackageSurface Mount
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C30A (Tc)
Vgs(Max)980 pF @ 25 V
MinRdsOn)13.6mOhm @ 30A, 10V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)-55°C ~ 175°C (TJ)

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