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Home > Products > Transistors > FETs, MOSFETs > ///IPC302N20N3X1SA1

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IPC302N20N3X1SA1Quantity:6465

Part No IPC302N20N3X1SA1
Manufacturer Infineon Technologies
Description MOSFET N-CH 200V 1A SAWN ON FOIL
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
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Specifications

Operating Temperature-
FET Feature-
PackageBulk
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds-
Gate Charge (Qg) (Max) @ Vgs-
Grade-
Mounting TypeSurface Mount
Product StatusActive
Rds On (Max) @ Id, Vgs100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id4V @ 260µA
Supplier Device PackageSawn on foil
Drain to Source Voltage (Vdss)200 V
SeriesOptiMOS™
Power Dissipation (Max)-
Qualification-
Package / CaseDie
TechnologyMOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C1A (Tj)
Vgs (Max)-
Drive Voltage (Max Rds On, Min Rds On)10V

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