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Home > Products > Transistors > FETs, MOSFETs > ///IPB80N06S2L06ATMA2

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IPB80N06S2L06ATMA2Quantity:9599

Part No IPB80N06S2L06ATMA2
Manufacturer Infineon Technologies
Description MOSFET N-CH 55V 80A TO263-3
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

RdsOn(Max)@Id2V @ 180µA
Vgs(th)(Max)@Id±20V
Vgs150 nC @ 10 V
FETFeature250W (Tc)
DraintoSourceVoltage(Vdss)55 V
OperatingTemperature-
DriveVoltage(MaxRdsOn4.5V, 10V
ProductStatusActive
Package/CasePG-TO263-3-2
GateCharge(Qg)(Max)@VgsTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Grade
MountingType-
InputCapacitance(Ciss)(Max)@Vds-
SeriesOptiMOS™
Qualification
SupplierDevicePackageSurface Mount
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C80A (Tc)
Vgs(Max)3800 pF @ 25 V
MinRdsOn)6mOhm @ 69A, 10V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)-55°C ~ 175°C (TJ)

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