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See Product Specifications for product details.
Buy IPB80N03S4L02ATMA1 with confidence from acme-chip.com, 1 Year Warranty
See Product Specifications for product details.
Buy IPB80N03S4L02ATMA1 with confidence from acme-chip.com, 1 Year Warranty
IPB80N03S4L02ATMA1Quantity:7366
| Part No | IPB80N03S4L02ATMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | MOSFET N-CH 30V 80A TO263-3 |
| Lead Free Status / RoHS Status | Contains lead /RoHS non-compliant |
| Datasheets |
Specifications
| RdsOn(Max)@Id | 2.2V @ 90µA |
|---|---|
| Vgs(th)(Max)@Id | ±16V |
| Vgs | 140 nC @ 10 V |
| FETFeature | 136W (Tc) |
| DraintoSourceVoltage(Vdss) | 30 V |
| OperatingTemperature | Surface Mount |
| DriveVoltage(MaxRdsOn | 4.5V, 10V |
| ProductStatus | Active |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| MountingType | PG-TO263-3-2 |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | OptiMOS™ |
| Qualification | |
| SupplierDevicePackage | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 80A (Tc) |
| Vgs(Max) | 9750 pF @ 25 V |
| MinRdsOn) | 2.4mOhm @ 80A, 10V |
| Package | Tape & Reel (TR) |
| PowerDissipation(Max) | -55°C ~ 175°C (TJ) |
Introduce
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