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Home > Products > Transistors > FETs, MOSFETs > ///IPB80N03S4L02ATMA1

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IPB80N03S4L02ATMA1Quantity:7366

Part No IPB80N03S4L02ATMA1
Manufacturer Infineon Technologies
Description MOSFET N-CH 30V 80A TO263-3
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
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Specifications

RdsOn(Max)@Id2.2V @ 90µA
Vgs(th)(Max)@Id±16V
Vgs140 nC @ 10 V
FETFeature136W (Tc)
DraintoSourceVoltage(Vdss)30 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn4.5V, 10V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypePG-TO263-3-2
InputCapacitance(Ciss)(Max)@Vds-
SeriesOptiMOS™
Qualification
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C80A (Tc)
Vgs(Max)9750 pF @ 25 V
MinRdsOn)2.4mOhm @ 80A, 10V
PackageTape & Reel (TR)
PowerDissipation(Max)-55°C ~ 175°C (TJ)

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