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Home > Products > Transistors > FETs, MOSFETs > ///IPB60R160P6ATMA1

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Part No IPB60R160P6ATMA1
Manufacturer Infineon Technologies
Description MOSFET N-CH 600V 23.8A D2PAK
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

RdsOn(Max)@Id44 nC @ 10 V
Vgs(th)(Max)@Id2080 pF @ 100 V
Vgs±20V
FETFeature-55°C ~ 150°C (TJ)
DraintoSourceVoltage(Vdss)600 V
OperatingTemperature-
DriveVoltage(MaxRdsOn160mOhm @ 9A, 10V
ProductStatusActive
Package/CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
GateCharge(Qg)(Max)@Vgs10V
Grade
MountingTypeSurface Mount
InputCapacitance(Ciss)(Max)@Vds176W (Tc)
SeriesCoolMOS™ P6
Qualification
SupplierDevicePackagePG-TO263-3
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C23.8A (Tc)
Vgs(Max)-
MinRdsOn)4.5V @ 750µA
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)-

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