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Home > Products > Transistors > FETs, MOSFETs > ///IGT60R190D1SATMA1

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IGT60R190D1SATMA1Quantity:5992

Part No IGT60R190D1SATMA1
Manufacturer Infineon Technologies
Description GANFET N-CH 600V 12.5A 8HSOF
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

RdsOn(Max)@Id1.6V @ 960µA
Vgs(th)(Max)@Id-10V
Vgs-
FETFeature55.5W (Tc)
DraintoSourceVoltage(Vdss)GaNFET (Gallium Nitride)
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn-
ProductStatusObsolete
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypePG-HSOF-8-3
InputCapacitance(Ciss)(Max)@Vds-
SeriesCoolGaN™
Qualification
SupplierDevicePackage8-PowerSFN
FETType12.5A (Tc)
TechnologyN-Channel
Current-ContinuousDrain(Id)@25°C600 V
Vgs(Max)157 pF @ 400 V
MinRdsOn)-
PackageTape & Reel (TR)
PowerDissipation(Max)-55°C ~ 150°C (TJ)

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