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Home > Products > Transistors > FETs, MOSFETs > ///IGT40R070D1E8220ATMA1

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IGT40R070D1E8220ATMA1Quantity:3605

Part No IGT40R070D1E8220ATMA1
Manufacturer Infineon Technologies
Description GAN N-CH 400V 31A HSOF-8-3
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
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Specifications

RdsOn(Max)@Id1.6V @ 2.6mA
Vgs(th)(Max)@Id±10V
Vgs-
FETFeature125W (Tc)
DraintoSourceVoltage(Vdss)400 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn-
ProductStatusObsolete
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypePG-HSOF-8-3
InputCapacitance(Ciss)(Max)@Vds-
SeriesCoolGaN™
Qualification
SupplierDevicePackage8-PowerSFN
FETTypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Current-ContinuousDrain(Id)@25°C31A (Tc)
Vgs(Max)382 pF @ 320 V
MinRdsOn)-
PackageTape & Reel (TR)
PowerDissipation(Max)0°C ~ 150°C (TJ)

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