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Home > Products > Transistors > FETs, MOSFETs > ///IGO60R070D1E8220AUMA1

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IGO60R070D1E8220AUMA1Quantity:20261

Part No IGO60R070D1E8220AUMA1
Manufacturer Infineon Technologies
Description GAN HV
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id1.6V @ 2.6mA
Vgs(th)(Max)@Id-
Vgs-10V
FETFeatureSurface Mount
DraintoSourceVoltage(Vdss)600 V
OperatingTemperature20-PowerSOIC (0.433, 11.00mm Width)
DriveVoltage(MaxRdsOn-
ProductStatusObsolete
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingType-
InputCapacitance(Ciss)(Max)@Vds-55°C ~ 150°C (TJ)
SeriesCoolGaN™
Qualification
SupplierDevicePackage380 pF @ 400 V
FETTypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Current-ContinuousDrain(Id)@25°C31A (Tc)
Vgs(Max)125W (Tc)
MinRdsOn)-
PackageBulk
PowerDissipation(Max)PG-DSO-20-85

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