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See Product Specifications for product details.
Buy HUF75309D3ST with confidence from acme-chip.com, 1 Year Warranty
See Product Specifications for product details.
Buy HUF75309D3ST with confidence from acme-chip.com, 1 Year Warranty
HUF75309D3STQuantity:14635
Part No | HUF75309D3ST |
---|---|
Manufacturer | Fairchild Semiconductor |
Description | Power Field-Effect Transistor, 19A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, |
Lead Free Status / RoHS Status | Lead Free / RoHS compliant |
Datasheets |
Reference Price (In US Dollars) | Get a Quote |
Specifications
Min Operating Temperature | -55 °C |
---|---|
Drain to Source Breakdown Voltage | 55 V |
Gate to Source Voltage (Vgs) | 20 V |
Mount | Surface Mount |
Current Rating | 19 A |
Fall Time | 30 ns |
RoHS | Compliant |
Max Operating Temperature | 175 °C |
Drain to Source Voltage (Vdss) | 55 V |
Power Dissipation | 55 W |
Drain to Source Resistance | 70 mΩ |
Continuous Drain Current (ID) | 19 A |
Element Configuration | Single |
Rise Time | 39 ns |
Turn-Off Delay Time | 24 ns |
Number of Elements | 1 |
Input Capacitance | 350 pF |
Voltage Rating (DC) | 55 V |
Lead Free | Lead Free |
Rds On Max | 70 mΩ |
Case/Package | TO-252 |
Max Power Dissipation | 55 W |
Introduce
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