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Home > Products > Transistors > IGBTs > ///HGTP12N60A4D

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HGTP12N60A4DQuantity:18837

Part No HGTP12N60A4D
Manufacturer Fairchild Semiconductor
Description INSULATED GATE BIPOLAR TRANSISTO
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

Voltage-CollectorEmitterBreakdown(Max)600 V
SwitchingEnergy55µJ (on), 50µJ (off)
OperatingTemperature30 ns
ProductStatusActive
Package/CaseTO-220-3
Grade-55°C ~ 150°C (TJ)
MountingTypeTO-220-3
ReverseRecoveryTime(trr)
Current-CollectorPulsed(Icm)-
Series-
Td(on/off)@25°C17ns/96ns
QualificationThrough Hole
SupplierDevicePackage-
InputTypeStandard
Vce(on)(Max)@Vge96 A
GateCharge78 nC
Current-Collector(Ic)(Max)54 A
Ic2.7V @ 15V, 12A
TestCondition390V, 12A, 10Ohm, 15V
PackageBulk
Power-Max167 W
IGBTType-

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