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Home > Products > Transistors > IGBTs > ///HGT1S10N120BNS

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HGT1S10N120BNSQuantity:18196

Part No HGT1S10N120BNS
Manufacturer onsemi
Description IGBT 1200V 35A 298W TO263AB
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Voltage-CollectorEmitterBreakdown(Max)1200 V
SwitchingEnergy320µJ (on), 800µJ (off)
OperatingTemperature-55°C ~ 150°C (TJ)
ProductStatusObsolete
Package/Case-
GradeSurface Mount
MountingTypeTO-263 (D2PAK)
ReverseRecoveryTime(trr)
Current-CollectorPulsed(Icm)
Series-
Td(on/off)@25°C23ns/165ns
QualificationTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SupplierDevicePackage
InputTypeStandard
Vce(on)(Max)@Vge80 A
GateCharge100 nC
Current-Collector(Ic)(Max)35 A
Ic2.7V @ 15V, 10A
TestCondition960V, 10A, 10Ohm, 15V
PackageTube
Power-Max298 W
IGBTTypeNPT

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