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Home > Products > Transistors > IGBTs > ///GT50N322A

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GT50N322AQuantity:9873

Part No GT50N322A
Manufacturer Toshiba Semiconductor and Storage
Description IGBT 1000V 50A TO3P
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

Voltage-CollectorEmitterBreakdown(Max)1000 V
SwitchingEnergy-
OperatingTemperature800 ns
ProductStatusActive
Package/CaseTO-3P(N)
Grade150°C (TJ)
MountingTypeTO-3P-3, SC-65-3
ReverseRecoveryTime(trr)
Current-CollectorPulsed(Icm)-
Series-
Td(on/off)@25°C-
QualificationThrough Hole
SupplierDevicePackage-
InputTypeStandard
Vce(on)(Max)@Vge120 A
GateCharge-
Current-Collector(Ic)(Max)50 A
Ic2.8V @ 15V, 60A
TestCondition-
PackageTray
Power-Max156 W
IGBTType-

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