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Home > Products > Transistors > IGBTs > ///GT40QR21(STA1,E,D

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GT40QR21(STA1,E,DQuantity:5721

Part No GT40QR21(STA1,E,D
Manufacturer Toshiba Semiconductor and Storage
Description IGBT 1200V 40A TO3P
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

Voltage-CollectorEmitterBreakdown(Max)1200 V
SwitchingEnergy-, 290µJ (off)
OperatingTemperature175°C (TJ)
ProductStatusActive
Package/Case600 ns
GradeThrough Hole
MountingTypeTO-3P(N)
ReverseRecoveryTime(trr)
Current-CollectorPulsed(Icm)-
Series-
Td(on/off)@25°C-
QualificationTO-3P-3, SC-65-3
SupplierDevicePackage-
InputTypeStandard
Vce(on)(Max)@Vge80 A
GateCharge-
Current-Collector(Ic)(Max)40 A
Ic2.7V @ 15V, 40A
TestCondition280V, 40A, 10Ohm, 20V
PackageTube
Power-Max230 W
IGBTType-

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