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Home > Products > Transistors > FETs, MOSFETs > ///GT038P06M

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GT038P06MQuantity:800

Part No GT038P06M
Manufacturer Goford Semiconductor
Description MOSFET P-CH 60V 200A 350W TO-26
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

Operating Temperature-55°C ~ 150°C (TJ)
FET Feature-
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
FET TypeP-Channel
Input Capacitance (Ciss) (Max) @ Vds11988 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs386 nC @ 10 V
Grade-
Mounting TypeSurface Mount
Product StatusActive
Rds On (Max) @ Id, Vgs4.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageTO-263
Drain to Source Voltage (Vdss)60 V
Series-
Power Dissipation (Max)350W (Tc)
Qualification-
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TechnologyMOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C200A (Tc)
Vgs (Max)±20V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V

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