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Home > Products > Transistors > FETs, MOSFETs > ///GT025N06AT

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GT025N06ATQuantity:5828

Part No GT025N06AT
Manufacturer Goford Semiconductor
Description N60V, 170A,RD<2.5M@10V,VTH1.2V~2
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id2.5V @ 250µA
Vgs(th)(Max)@Id±20V
Vgs70 nC @ 10 V
FETFeature215W (Tc)
DraintoSourceVoltage(Vdss)60 V
OperatingTemperatureThrough Hole
DriveVoltage(MaxRdsOn4.5V, 10V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypeTO-220
InputCapacitance(Ciss)(Max)@VdsStandard
SeriesSGT
Qualification
SupplierDevicePackageTO-220-3
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C170A (Tc)
Vgs(Max)4954 pF @ 30 V
MinRdsOn)2.5mOhm @ 20A, 10V
PackageTube
PowerDissipation(Max)-55°C ~ 150°C (TJ)

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