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Home > Products > Transistors > FETs, MOSFETs > ///GT011N03TE

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GT011N03TEQuantity:4000

Part No GT011N03TE
Manufacturer Goford Semiconductor
Description MOSFET N-CH ESD 30V 209A 89W TO
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

Operating Temperature-55°C ~ 150°C (TJ)
FET Feature-
PackageTube
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds5988 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs98 nC @ 10 V
Grade-
Mounting TypeThrough Hole
Product StatusActive
Rds On (Max) @ Id, Vgs2.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageTO-220
Drain to Source Voltage (Vdss)30 V
Series-
Power Dissipation (Max)89W (Tc)
Qualification-
Package / CaseTO-220-3
TechnologyMOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C209A (Tc)
Vgs (Max)±20V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V

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