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Home > Products > Transistors > FETs, MOSFETs > ///GS120R045Q4

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GS120R045Q4Quantity:19150

Part No GS120R045Q4
Manufacturer Goford Semiconductor
Description SiC MOSFET N-CH 1200V 60A TO-24
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id52mOhm @ 20A, 18V
Vgs(th)(Max)@Id-
Vgs4V @ 10mA
FETFeature395W (Tc)
DraintoSourceVoltage(Vdss)N-Channel
OperatingTemperature-
DriveVoltage(MaxRdsOn60A (Tc)
ProductStatusActive
Package/CaseTO-247-4L
GateCharge(Qg)(Max)@VgsTO-247-4
Grade
MountingType-
InputCapacitance(Ciss)(Max)@Vds2565 pF @ 1000 V
Series-
Qualification
SupplierDevicePackageThrough Hole
FETTypeSiCFET (Silicon Carbide)
Technology-
Current-ContinuousDrain(Id)@25°C1200 V
Vgs(Max)-10V, +20V
MinRdsOn)18V
PackageTube
PowerDissipation(Max)-55°C ~ 175°C (TJ)

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