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Home > Products > Transistors > FETs, MOSFETs > ///GC20N65T

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GC20N65TQuantity:10268

Part No GC20N65T
Manufacturer Goford Semiconductor
Description N650V,RD(MAX)<170M@10V,VTH2.5V~4
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id4.5V @ 250µA
Vgs(th)(Max)@Id±30V
Vgs39 nC @ 10 V
FETFeature151W (Tc)
DraintoSourceVoltage(Vdss)650 V
OperatingTemperature-
DriveVoltage(MaxRdsOn10V
ProductStatusActive
Package/CaseTO-220
GateCharge(Qg)(Max)@VgsTO-220-3
Grade
MountingType-
InputCapacitance(Ciss)(Max)@VdsStandard
SeriesCool MOS™
Qualification
SupplierDevicePackageThrough Hole
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C20A (Tc)
Vgs(Max)1724 pF @ 100 V
MinRdsOn)170mOhm @ 10A, 10V
PackageTube
PowerDissipation(Max)-55°C ~ 150°C (TJ)

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