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Home > Products > Transistors > FETs, MOSFETs > ///GC11N65T

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GC11N65TQuantity:3757

Part No GC11N65T
Manufacturer Goford Semiconductor
Description N650V,RD(MAX)<360M@10V,VTH2.5V~4
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id4V @ 250µA
Vgs(th)(Max)@Id±30V
Vgs21 nC @ 10 V
FETFeature192W (Tc)
DraintoSourceVoltage(Vdss)650 V
OperatingTemperatureThrough Hole
DriveVoltage(MaxRdsOn10V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypeTO-220
InputCapacitance(Ciss)(Max)@VdsStandard
SeriesCool MOS™
Qualification
SupplierDevicePackageTO-220-3
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C11A (Tc)
Vgs(Max)901 pF @ 50 V
MinRdsOn)360mOhm @ 5.5A, 10V
PackageTube
PowerDissipation(Max)-55°C ~ 150°C (TJ)

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