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Home > Products > Transistors > FETs, MOSFETs > ///G60N06T

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G60N06TQuantity:9243

Part No G60N06T
Manufacturer Goford Semiconductor
Description N60V, 50A,RD<17M@10V,VTH1.0V~2.0
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id2V @ 250µA
Vgs(th)(Max)@Id±20V
Vgs50 nC @ 10 V
FETFeature85W (Tc)
DraintoSourceVoltage(Vdss)60 V
OperatingTemperatureThrough Hole
DriveVoltage(MaxRdsOn4.5V, 10V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypeTO-220
InputCapacitance(Ciss)(Max)@VdsStandard
SeriesTrenchFET®
Qualification
SupplierDevicePackageTO-220-3
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C50A (Tc)
Vgs(Max)2050 pF @ 30 V
MinRdsOn)17mOhm @ 5A, 10V
PackageTube
PowerDissipation(Max)-55°C ~ 150°C (TJ)

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