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Home > Products > Transistors > FETs, MOSFETs > ///G10N03S

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G10N03SQuantity:15480

Part No G10N03S
Manufacturer Goford Semiconductor
Description N30V,RD(MAX)<12M@10V,RD(MAX)<16M
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id2.5V @ 250µA
Vgs(th)(Max)@Id±20V
Vgs17 nC @ 4.5 V
FETFeature2.5W (Tc)
DraintoSourceVoltage(Vdss)30 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn4.5V, 10V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingType8-SOP
InputCapacitance(Ciss)(Max)@VdsStandard
SeriesTrenchFET®
Qualification
SupplierDevicePackage8-SOIC (0.154, 3.90mm Width)
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C10A (Tc)
Vgs(Max)839 pF @ 15 V
MinRdsOn)12mOhm @ 6A, 10V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)-55°C ~ 150°C (TJ)

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