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Home > Products > Transistors > FETs, MOSFETs > ///G1006LE

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G1006LEQuantity:2846

Part No G1006LE
Manufacturer Goford Semiconductor
Description N100V,RD(MAX)<150M@10V,RD(MAX)<1
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id150mOhm @ 3A, 10V
Vgs(th)(Max)@Id18.2 nC @ 10 V
Vgs2.2V @ 250µA
FETFeature1.5W (Tc)
DraintoSourceVoltage(Vdss)N-Channel
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn3A (Tc)
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypeSOT-23-3
InputCapacitance(Ciss)(Max)@Vds622 pF @ 50 V
SeriesTrenchFET®
Qualification
SupplierDevicePackageTO-236-3, SC-59, SOT-23-3
FETTypeMOSFET (Metal Oxide)
TechnologyStandard
Current-ContinuousDrain(Id)@25°C100 V
Vgs(Max)±20V
MinRdsOn)4.5V, 10V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)-55°C ~ 150°C (TJ)

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