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Home > Products > Transistors > FETs, MOSFETs > ///FQI17P10TU

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FQI17P10TUQuantity:2998

Part No FQI17P10TU
Manufacturer Fairchild Semiconductor
Description P-CHANNEL POWER MOSFET
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
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Specifications

RdsOn(Max)@Id4V @ 250µA
Vgs(th)(Max)@Id±30V
Vgs39 nC @ 10 V
FETFeature3.75W (Ta), 100W (Tc)
DraintoSourceVoltage(Vdss)100 V
OperatingTemperatureThrough Hole
DriveVoltage(MaxRdsOn10V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypeTO-262 (I2PAK)
InputCapacitance(Ciss)(Max)@Vds-
SeriesQFET™
Qualification
SupplierDevicePackageTO-262-3 Long Leads, I2PAK, TO-262AA
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C16.5A (Tc)
Vgs(Max)1100 pF @ 25 V
MinRdsOn)190mOhm @ 8.25A, 10V
PackageBulk
PowerDissipation(Max)-55°C ~ 175°C (TJ)

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