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FQB3N90TMQuantity:7775

Part No FQB3N90TM
Manufacturer ON Semiconductor
Description MOSFET N-CH 900V 3.6A D2PAK
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Drain to Source Voltage (Vdss):900V
Power Dissipation (Max):3.13W (Ta), 130W (Tc)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type:Surface Mount
Packaging:Tape & Reel (TR)
Supplier Device Package:D²PAK (TO-263AB)
Vgs(th) (Max) @ Id:5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On):10V
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:N-Channel 900V 3.6A (Tc) 3.13W (Ta), 130W (Tc) Surface Mount D²PAK (TO-263AB)
FET Feature:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Email:[email protected]
FET Type:N-Channel
Series:QFET®
Current - Continuous Drain (Id) @ 25°C:3.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds:910pF @ 25V
Vgs (Max):±30V
Rds On (Max) @ Id, Vgs:4.25 Ohm @ 1.8A, 10V
Technology:MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:26nC @ 10V
Operating Temperature:-55°C ~ 150°C (TJ)

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