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Home > Products > Transistors > FETs, MOSFETs > ///FF17MR12W1M1HB17BPSA1

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FF17MR12W1M1HB17BPSA1Quantity:24

Part No FF17MR12W1M1HB17BPSA1
Manufacturer Infineon Technologies
Description EASY STANDARD
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

Operating Temperature-40°C ~ 175°C (TJ)
FET FeatureSilicon Carbide (SiC)
Configuration2 N-Channel (Half Bridge)
PackageTray
Input Capacitance (Ciss) (Max) @ Vds4400pF @ 800V
Gate Charge (Qg) (Max) @ Vgs149nC @ 18V
Grade-
Mounting TypeChassis Mount
Product StatusActive
Rds On (Max) @ Id, Vgs16.2mOhm @ 50A, 18V
Vgs(th) (Max) @ Id5.15V @ 20mA
Supplier Device PackageAG-EASY1B
Drain to Source Voltage (Vdss)1200V (1.2kV)
SeriesCoolSiC™
Qualification-
Package / CaseModule
TechnologySilicon Carbide (SiC)
Power - Max20mW
Current - Continuous Drain (Id) @ 25°C50A (Tj)

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