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Home > Products > Transistors > FETs, MOSFETs > ///FDP100N10

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FDP100N10Quantity:14108

Part No FDP100N10
Manufacturer Fairchild Semiconductor
Description POWER FIELD-EFFECT TRANSISTOR, 7
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id4.5V @ 250µA
Vgs(th)(Max)@Id±20V
Vgs100 nC @ 10 V
FETFeature208W (Tc)
DraintoSourceVoltage(Vdss)100 V
OperatingTemperatureThrough Hole
DriveVoltage(MaxRdsOn10V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypeTO-220-3
InputCapacitance(Ciss)(Max)@Vds-
SeriesPowerTrench®
Qualification
SupplierDevicePackageTO-220-3
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C75A (Tc)
Vgs(Max)7300 pF @ 25 V
MinRdsOn)10mOhm @ 75A, 10V
PackageBulk
PowerDissipation(Max)-55°C ~ 175°C (TJ)

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