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Home > Products > Transistors > Bipolar (BJT) > ///EMF5XV6T1G

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EMF5XV6T1GQuantity:22512

Part No EMF5XV6T1G
Manufacturer onsemi
Description TRANS PREBIAS 1NPN 1PNP SOT563
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

Voltage-CollectorEmitterBreakdown(Max)50V, 12V
VceSaturation(Max)@Ib500nA, 100nA (ICBO)
ProductStatusActive
Package/Case-
TransistorType1 NPN, 1 PNP - Pre-Biased (Dual)
Grade
MountingTypeSOT-563
Current-CollectorCutoff(Max)357mW
SeriesEMF
DCCurrentGain(hFE)(Min)@Ic80 @ 5mA, 10V / 270 @ 10mA, 2V
Frequency-TransitionSurface Mount
Qualification
SupplierDevicePackage-
Vce250mV @ 300µA, 10mA / 250mV @ 10mA, 200mA
Current-Collector(Ic)(Max)100mA, 500mA
Ic-
PackageTape & Reel (TR)
Resistor-Base(R1)47kOhms
Power-MaxSOT-563, SOT-666
Resistor-EmitterBase(R2)-

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