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Home > Products > Transistors > FETs, MOSFETs > ///DMT10H009LSSQ-13

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Part No DMT10H009LSSQ-13
Manufacturer Diodes Incorporated
Description MOSFET BVDSS: 61V~100V SO-8 T&R
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

Operating Temperature-55°C ~ 150°C (TJ)
FET Feature-
PackageTape & Reel (TR)
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds2309 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs40.2 nC @ 10 V
GradeAutomotive
Mounting TypeSurface Mount
Product StatusActive
Rds On (Max) @ Id, Vgs9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package8-SO
Drain to Source Voltage (Vdss)100 V
Series-
Power Dissipation (Max)1.8W (Ta)
QualificationAEC-Q101
Package / Case8-SOIC (0.154", 3.90mm Width)
TechnologyMOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C13A (Ta), 48A (Tc)
Vgs (Max)±20V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V

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