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Part No BUZ32H3045AATMA1
Manufacturer Infineon Technologies
Description MOSFET N-CH 200V 9.5A TO263-3
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
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Specifications

RdsOn(Max)@Id530 pF @ 25 V
Vgs(th)(Max)@Id75W (Tc)
Vgs-
FETFeaturePG-TO263-3-2
DraintoSourceVoltage(Vdss)200 V
OperatingTemperature10V
DriveVoltage(MaxRdsOn400mOhm @ 6A, 10V
ProductStatusObsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingType±20V
InputCapacitance(Ciss)(Max)@VdsSurface Mount
SeriesSIPMOS®
Qualification
SupplierDevicePackage-
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C9.5A (Tc)
Vgs(Max)-55°C ~ 150°C (TJ)
MinRdsOn)4V @ 1mA
PackageTube
PowerDissipation(Max)TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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