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Home > Products > Transistors > FETs, MOSFETs > ///BSZ120P03NS3EGATMA1

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BSZ120P03NS3EGATMA1Quantity:8101

Part No BSZ120P03NS3EGATMA1
Manufacturer Infineon Technologies
Description MOSFET P-CH 30V 11A/40A 8TSDSON
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
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Specifications

RdsOn(Max)@Id3.1V @ 73µA
Vgs(th)(Max)@Id±25V
Vgs45 nC @ 10 V
FETFeature2.1W (Ta), 52W (Tc)
DraintoSourceVoltage(Vdss)30 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn6V, 10V
ProductStatusObsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingTypePG-TSDSON-8
InputCapacitance(Ciss)(Max)@Vds-
SeriesOptiMOS™
Qualification
SupplierDevicePackage8-PowerTDFN
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C11A (Ta), 40A (Tc)
Vgs(Max)3360 pF @ 15 V
MinRdsOn)12mOhm @ 20A, 10V
PackageTape & Reel (TR)
PowerDissipation(Max)-55°C ~ 150°C (TJ)

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