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BSS670S2LL6327Quantity:8768

Part No BSS670S2LL6327
Manufacturer
Description Small Signal Field-Effect Transistor, 0.54A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-3
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

Min Operating Temperature-55 °C
Drain to Source Breakdown Voltage55 V
Gate to Source Voltage (Vgs)20 V
MountSurface Mount
Fall Time25 ns
Turn-On Delay Time9 ns
RoHSCompliant
Radiation HardeningNo
Max Operating Temperature150 °C
Drain to Source Voltage (Vdss)55 V
Power Dissipation360 mW
Drain to Source Resistance650 mΩ
Continuous Drain Current (ID)540 mA
Element ConfigurationSingle
Rise Time25 ns
Turn-Off Delay Time21 ns
Number of Pins3
Input Capacitance75 pF
Rds On Max650 mΩ
Case/PackageSOT-23-3
Max Power Dissipation360 mW

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