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BSP295L6327Quantity:10343

Part No BSP295L6327
Manufacturer
Description Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Min Operating Temperature-55 °C
Threshold Voltage1.1 V
Dual Supply Voltage60 V
MountSurface Mount
Fall Time9.9 ns
RoHSCompliant
Radiation HardeningNo
Drain to Source Voltage (Vdss)60 V
Drain to Source Resistance300 mΩ
Number of Pins3
Number of Elements1
Input Capacitance368 pF
Width6.7 mm
Lead FreeLead Free
Rds On Max300 mΩ
Max Power Dissipation1.8 W
Drain to Source Breakdown Voltage60 V
Nominal Vgs1.1 V
Gate to Source Voltage (Vgs)20 V
REACH SVHCNo SVHC
Current Rating1.8 A
TerminationSMD/SMT
Turn-On Delay Time5.4 ns
Max Operating Temperature150 °C
Power Dissipation1.8 W
Continuous Drain Current (ID)1.8 A
Rise Time9.9 ns
Turn-Off Delay Time27 ns
Voltage Rating (DC)60 V
Case/PackageSOT-223

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