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Home > Products > Transistors > FETs, MOSFETs > ///BSB056N10NN3GXUMA1

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BSB056N10NN3GXUMA1Quantity:9181

Part No BSB056N10NN3GXUMA1
Manufacturer Infineon Technologies
Description MOSFET N-CH 100V 9A/83A 2WDSON
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

RdsOn(Max)@Id3.5V @ 100µA
Vgs(th)(Max)@Id±20V
Vgs74 nC @ 10 V
FETFeature-40°C ~ 150°C (TJ)
DraintoSourceVoltage(Vdss)100 V
OperatingTemperatureMG-WDSON-2, CanPAK M™
DriveVoltage(MaxRdsOn6V, 10V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingType3-WDSON
InputCapacitance(Ciss)(Max)@Vds2.8W (Ta), 78W (Tc)
SeriesOptiMOS™
Qualification
SupplierDevicePackage5500 pF @ 50 V
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C9A (Ta), 83A (Tc)
Vgs(Max)-
MinRdsOn)5.6mOhm @ 30A, 10V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)Surface Mount

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