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Home > Products > Transistors > Bipolar (BJT) > ///BFP740E6327

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BFP740E6327Quantity:18160

Part No BFP740E6327
Manufacturer
Description RF TRANSISTOR, X BAND, NPN
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Min Operating Temperature-65 °C
MountSurface Mount
Continuous Collector Current30 mA
RoHSCompliant
Radiation HardeningNo
Element ConfigurationSingle
Emitter Base Voltage (VEBO)1.2 V
Number of Pins4
PolarityNPN
Height900 µm
Number of Elements1
Collector Emitter Breakdown Voltage4.7 V
Width1.25 mm
Lead FreeLead Free
Collector Base Voltage (VCBO)13 V
Max Power Dissipation160 mW
Current Rating30 mA
Collector Emitter Voltage (VCEO)4 V
Transition Frequency42 GHz
Max Collector Current30 mA
Max Operating Temperature150 °C
Power Dissipation160 mW
Length2 mm
Max Breakdown Voltage4.7 V
Frequency42 GHz
Voltage Rating (DC)4 V
Gain27 dB
Case/PackageSOT-343

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