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Home > Products > Transistors > Bipolar (BJT) > ///BFP640E6327

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BFP640E6327Quantity:19354

Part No BFP640E6327
Manufacturer
Description RF BIPOLAR TRANSISTOR
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

Min Operating Temperature-65 °C
MountSurface Mount
Continuous Collector Current50 mA
RoHSCompliant
Emitter Base Voltage (VEBO)1.2 V
Number of Pins4
PolarityNPN
Height900 µm
Number of Elements1
Collector Emitter Breakdown Voltage4.5 V
Width1.25 mm
Collector Base Voltage (VCBO)13 V
Max Power Dissipation200 mW
Max Junction Temperature (Tj)150 °C
Collector Emitter Voltage (VCEO)4 V
hFE Min110
Transition Frequency40 GHz
Max Collector Current50 mA
Max Operating Temperature150 °C
Power Dissipation200 mW
Length2 mm
Max Breakdown Voltage4.5 V
PackagingCut Tape (CT)
Frequency40 GHz
Gain24 dB
Case/PackageSOT-343-4

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