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BCV61C215Quantity:4318

Part No BCV61C215
Manufacturer NXP Semiconductors
Description Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

Min Operating Temperature-65 °C
Max Repetitive Reverse Voltage (Vrrm)30 V
Voltage Rating30 V
MountSurface Mount
Gain Bandwidth Product100 MHz
RoHSCompliant
Radiation HardeningNo
Element ConfigurationDual
Emitter Base Voltage (VEBO)6 V
Number of Pins4
PolarityNPN
Height6.35 mm
Number of Elements2
Collector Emitter Breakdown Voltage30 V
Width6.35 mm
Collector Base Voltage (VCBO)30 V
Max Power Dissipation250 mW
Max Forward Surge Current (Ifsm)600 mA
REACH SVHCNo SVHC
Current Rating100 mA
Forward Current200 mA
TerminationSMD/SMT
Collector Emitter Voltage (VCEO)30 V
Weight4.535924 g
hFE Min420
Transition Frequency100 MHz
Max Collector Current200 mA
Max Operating Temperature150 °C
Power Dissipation250 mW
Length6.35 mm
Contact PlatingTin
Frequency100 MHz
Forward Voltage800 mV
Case/PackageTO-253-4

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