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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > ///B50NE10

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B50NE10Quantity:6411

Part No B50NE10
Manufacturer STMicroelectronics
Description -
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

Operating Temperature-65u00b0C ~ 175u00b0C (TJ)
FET Feature-
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds6000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs166 nC @ 10 V
Current - Continuous Drain (Id) @ 25u00b0C50A (Tc)
Mounting TypeSurface Mount
Rds On (Max) @ Id, Vgs27mOhm @ 25A, 10V
Vgs(th) (Max) @ Id4V @ 250u00b5A
Supplier Device PackageD2PAK
Drain to Source Voltage (Vdss)100 V
SeriesSTripFETu2122
Power Dissipation (Max)180W (Tc)
Package / CaseTO-263-3, Du00b2Pak (2 Leads + Tab), TO-263AB
TechnologyMOSFET (Metal Oxide)
MfrSTMicroelectronics
Part StatusObsolete
Vgs (Max)u00b120V
Drive Voltage (Max Rds On, Min Rds On)10V
PackageTape & Reel (TR)
Base Product NumberSTB50N

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