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Home > Products > Transistors > FETs, MOSFETs > ///AS1M080120P

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Part No AS1M080120P
Manufacturer ANBON SEMICONDUCTOR (INT'L) LIMITED
Description N-CHANNEL SILICON CARBIDE POWER
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id98mOhm @ 20A, 20V
Vgs(th)(Max)@Id79 nC @ 20 V
Vgs4V @ 5mA
FETFeature192W (Tc)
DraintoSourceVoltage(Vdss)N-Channel
OperatingTemperature-
DriveVoltage(MaxRdsOn36A (Tc)
ProductStatusActive
Package/CaseTO-247-3
GateCharge(Qg)(Max)@VgsTO-247-3
Grade
MountingType-
InputCapacitance(Ciss)(Max)@Vds1475 pF @ 1000 V
Series-
Qualification
SupplierDevicePackageThrough Hole
FETTypeSiCFET (Silicon Carbide)
Technology-
Current-ContinuousDrain(Id)@25°C1200 V
Vgs(Max)+25V, -10V
MinRdsOn)20V
PackageTube
PowerDissipation(Max)-55°C ~ 150°C (TJ)

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