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Home > Products > Transistors > FETs, MOSFETs > ///AIMDQ75R027M1HXUMA1

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Part No AIMDQ75R027M1HXUMA1
Manufacturer Infineon Technologies
Description AIMDQ75R027M1HXUMA1
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

Operating Temperature-55°C ~ 175°C (TJ)
FET Feature-
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds1668 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs49 nC @ 18 V
GradeAutomotive
Mounting TypeSurface Mount
Product StatusActive
Rds On (Max) @ Id, Vgs25mOhm @ 24.5A, 20V
Vgs(th) (Max) @ Id5.6V @ 8.8mA
Supplier Device PackagePG-HDSOP-22
Drain to Source Voltage (Vdss)750 V
SeriesCoolSiC™
Power Dissipation (Max)273W (Tc)
QualificationAEC-Q101
Package / Case22-PowerBSOP Module
TechnologySiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C64A (Tj)
Vgs (Max)+23V, -5V
Drive Voltage (Max Rds On, Min Rds On)15V, 20V

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