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630AQuantity:4521

Part No 630A
Manufacturer Goford Semiconductor
Description N200V,RD(MAX)<280M@10V,VTH1V~3V
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id280mOhm @ 4.5A, 10V
Vgs(th)(Max)@Id11.8 nC @ 10 V
Vgs3V @ 250µA
FETFeatureStandard
DraintoSourceVoltage(Vdss)MOSFET (Metal Oxide)
OperatingTemperature-55°C ~ 150°C (TJ)
DriveVoltage(MaxRdsOn11A (Tc)
ProductStatusTrenchFET®
Package/CaseTO-252-3, DPak (2 Leads + Tab), SC-63
GateCharge(Qg)(Max)@Vgs-
Grade-
MountingTypeSurface Mount
InputCapacitance(Ciss)(Max)@Vds509 pF @ 25 V
SeriesTape & Reel (TR),Cut Tape (CT)
Qualification
SupplierDevicePackageTO-252
FETTypeActive
TechnologyN-Channel
Current-ContinuousDrain(Id)@25°C200 V
Vgs(Max)±20V
MinRdsOn)10V
Package1
PowerDissipation(Max)83W (Tc)

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