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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > ///048N12N

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048N12NQuantity:5104

Part No 048N12N
Manufacturer Infineon Technologies
Description -
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

Operating Temperature-55u00b0C ~ 175u00b0C (TJ)
FET Feature-
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds12000 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs182 nC @ 10 V
Current - Continuous Drain (Id) @ 25u00b0C100A (Tc)
Mounting TypeThrough Hole
Rds On (Max) @ Id, Vgs4.8mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4V @ 230u00b5A
Supplier Device PackagePG-TO220-3-1
Drain to Source Voltage (Vdss)120 V
SeriesOptiMOSu2122
Power Dissipation (Max)300W (Tc)
Package / CaseTO-220-3
TechnologyMOSFET (Metal Oxide)
MfrInfineon Technologies
Part StatusActive
Vgs (Max)u00b120V
Drive Voltage (Max Rds On, Min Rds On)10V
PackageTube
Base Product NumberIPP048

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