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| Image | Part Number | Manufacturers | Description | Lead Free | RoHS | View |
|---|---|---|---|---|---|---|
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W66CP2NQQAGJ | Winbond Electronics | 4GB LPDDR4, DDP, X32, 1866MHZ, - | Contains Lead | compliant | RFQ >> |
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W66CQ2NQQAFJ TR | Winbond Electronics | 4GB LPDDR4X, DDP, X32, 1600MHZ, | Contains Lead | compliant | RFQ >> |
|
W66CQ2NQQAGJ | Winbond Electronics | 4GB LPDDR4X, DDP, X32, 1866MHZ, | Contains Lead | compliant | RFQ >> |
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W66CP2NQQAFJ TR | Winbond Electronics | 4GB LPDDR4, DDP, X32, 1600MHZ, - | Contains Lead | compliant | RFQ >> |
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MT53E768M16D1ZW-046 IT:C TR | Micron Technology Inc. | LPDDR4 12GBIT 16 200/264 TFBGA 1 | Contains Lead | compliant | RFQ >> |
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MX66L1G45JZ4I08 | Macronix | NOR FLASH | Contains Lead | compliant | RFQ >> |
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W66CQ2NQQAGJ TR | Winbond Electronics | 4GB LPDDR4X, DDP, X32, 1866MHZ, | Contains Lead | compliant | RFQ >> |
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W66CP2NQQAGJ TR | Winbond Electronics | 4GB LPDDR4, DDP, X32, 1866MHZ, - | Contains Lead | compliant | RFQ >> |
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W66CP2NQQAHJ | Winbond Electronics | 4GB LPDDR4, DDP, X32, 2133MHZ, - | Contains Lead | compliant | RFQ >> |
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W66CQ2NQQAHJ | Winbond Electronics | 4GB LPDDR4X, DDP, X32, 2133MHZ, | Contains Lead | compliant | RFQ >> |
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GD55LF01GFFIRR | GigaDevice Semiconductor (HK) Limited | NOR FLASH | Contains Lead | compliant | RFQ >> |
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W66CP2NQQAHJ TR | Winbond Electronics | 4GB LPDDR4, DDP, X32, 2133MHZ, - | Contains Lead | compliant | RFQ >> |
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W66CQ2NQQAHJ TR | Winbond Electronics | 4GB LPDDR4X, DDP, X32, 2133MHZ, | Contains Lead | compliant | RFQ >> |
 |
IME2532SDBETG-6I | Intelligent Memory Ltd. | ECC SDRAM, 256MB, 3.3V, 8MX32, 1 | Contains Lead | compliant | RFQ >> |
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ASFC32G31T3-51BINTR | Alliance Memory, Inc. | 32GB, EMMC 5.1, 3V, TLC GEN3 NAN | Contains Lead | compliant | RFQ >> |
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GD55T01GEYIGR | GigaDevice Semiconductor (HK) Limited | NOR FLASH | Contains Lead | compliant | RFQ >> |
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MT42L64M32D2HE-18 AUT:D TR | Micron Technology Inc. | IC MEMORY DRAM 2G 134FBGA | Contains Lead | compliant | RFQ >> |
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IME5116SDBETG-75 | Intelligent Memory Ltd. | ECC SDRAM, 512MB, 3.3V, 32MX16, | Contains Lead | compliant | RFQ >> |
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IME5108SDBETG-75 | Intelligent Memory Ltd. | ECC SDRAM, 512MB, 3.3V, 64MX8, 1 | Contains Lead | compliant | RFQ >> |
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GD55T01GEFERR | GigaDevice Semiconductor (HK) Limited | NOR FLASH | Contains Lead | compliant | RFQ >> |
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MT42L64M32D2HE-18 AUT:D | Micron Technology Inc. | IC MEMORY DRAM 2G 134FBGA | Contains Lead | compliant | RFQ >> |
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GD9FU4G8F3AMG2 | GigaDevice Semiconductor (HK) Limited | NAND FLASH | Contains Lead | compliant | RFQ >> |
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GD55B01GEFJRR | GigaDevice Semiconductor (HK) Limited | NOR FLASH | Contains Lead | compliant | RFQ >> |
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EM004LXQBB313CS1R | Everspin Technologies Inc. | IC RAM 4MBIT XSPI/QUAD 24TBGA | Contains Lead | compliant | RFQ >> |
|
EM004LXQBB313CS2R | Everspin Technologies Inc. | QUAD SPI | Contains Lead | compliant | RFQ >> |
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EM004LXQBDH13CS2R | Everspin Technologies Inc. | QUAD SPI | Contains Lead | compliant | RFQ >> |
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AS4C256M16D3LC-10BCNTR | Alliance Memory, Inc. | 256M X 16, 1.35V, 933MHZ, DDR3-1 | Contains Lead | compliant | RFQ >> |
|
AS4C256M16D3C-10BCNTR | Alliance Memory, Inc. | 256M X 16, 1.5V, 933MHZ, DDR3-18 | Contains Lead | compliant | RFQ >> |
 |
EM004LXQBDH13CS1R | Everspin Technologies Inc. | IC RAM 4MB XSPI/QUAD 8DFN | Contains Lead | compliant | RFQ >> |
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EM004LXQBB313CS1T | Everspin Technologies Inc. | IC RAM 4MBIT XSPI/QUAD 24TBGA | Contains Lead | compliant | RFQ >> |
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EM004LXQBB313CS2T | Everspin Technologies Inc. | QUAD SPI | Contains Lead | compliant | RFQ >> |
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EM004LXOBB320CS1R | Everspin Technologies Inc. | IC RAM 4MB XSPI/OCTAL 24TBGA | Contains Lead | compliant | RFQ >> |
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EM004LXOBB320CS2R | Everspin Technologies Inc. | OCTAL SPI | Contains Lead | compliant | RFQ >> |
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GD55LB01GEBERY | GigaDevice Semiconductor (HK) Limited | NOR FLASH | Contains Lead | compliant | RFQ >> |
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MT53E768M16D1ZW-046 AIT:C TR | Micron Technology Inc. | LPDDR4 12GBIT 16 200/264 TFBGA 1 | Contains Lead | compliant | RFQ >> |
|
EM004LXQBB313IS1R | Everspin Technologies Inc. | IC RAM 4MBIT XSPI/QUAD 24TBGA | Contains Lead | compliant | RFQ >> |
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EM004LXQBB313IS2R | Everspin Technologies Inc. | QUAD SPI | Contains Lead | compliant | RFQ >> |
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EM004LXQBDH13IS2R | Everspin Technologies Inc. | QUAD SPI | Contains Lead | compliant | RFQ >> |
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AS4C256M16D3C-10BINTR | Alliance Memory, Inc. | 256M X 16, 1.5V, 933MHZ, DDR3-18 | Contains Lead | compliant | RFQ >> |
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AS4C256M16D3LC-10BINTR | Alliance Memory, Inc. | 256M X 16, 1.35V, 933MHZ, DDR3-1 | Contains Lead | compliant | RFQ >> |
|
GD9FU8G8E4DLGI | GigaDevice Semiconductor (HK) Limited | NAND FLASH | Contains Lead | compliant | RFQ >> |
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BY29G1GFSBIG(Y) | BYTe Semiconductor | 1 GBIT, 3.0V (2.7V TO 3.6V), -40 | Contains Lead | compliant | RFQ >> |
|
EM004LXOBB320CS2T | Everspin Technologies Inc. | OCTAL SPI | Contains Lead | compliant | RFQ >> |
 |
W638GU6QB-12 TR | Winbond Electronics | 8GB DDR3L 1.35V SDRAM, X16, 800M | Contains Lead | compliant | RFQ >> |
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GD9FU8G8E4DMGI | GigaDevice Semiconductor (HK) Limited | NAND FLASH | Contains Lead | compliant | RFQ >> |
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EM004LXQBDH13IS1R | Everspin Technologies Inc. | IC RAM 4MB XSPI/QUAD 8DFN | Contains Lead | compliant | RFQ >> |
|
GD9FS8G8E4DLGI | GigaDevice Semiconductor (HK) Limited | NAND FLASH | Contains Lead | compliant | RFQ >> |
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EM004LXQBB313IS2T | Everspin Technologies Inc. | QUAD SPI | Contains Lead | compliant | RFQ >> |
|
EM004LXOBB320IS1R | Everspin Technologies Inc. | IC RAM 4MB XSPI/OCTAL 24TBGA | Contains Lead | compliant | RFQ >> |
|
GD9FS8G8E4DMGI | GigaDevice Semiconductor (HK) Limited | NAND FLASH | Contains Lead | compliant | RFQ >> |
