Copyright © 2021 Reliable Distributor of Electronic Components - acme-chip.com
E-mail: [email protected]
Address: Room 666, building 404, Shangbu Industrial Zone, Hongli Road, Futian District, Shenzhen
| Image | Part Number | Manufacturers | Description | Lead Free | RoHS | View |
|---|---|---|---|---|---|---|
 |
MT29F8G08ABBCAH4-AUT:C TR | Micron Technology Inc. | NAND FLASH PLASTIC M71M | Contains Lead | compliant | RFQ >> |
|
MT29F8G08ABACAH4-AUT:C TR | Micron Technology Inc. | NAND FLASH PLASTIC M71M | Contains Lead | compliant | RFQ >> |
|
MT29F8G08ABACAH4-AUT:C | Micron Technology Inc. | NAND FLASH PLASTIC M71M | Contains Lead | compliant | RFQ >> |
|
MT29F8G08ABBCAH4-AUT:C | Micron Technology Inc. | NAND FLASH PLASTIC M71M | Contains Lead | compliant | RFQ >> |
|
MT42L16M32D1HE-18 AUT:E | Micron Technology Inc. | IC MEMORY DRAM 512M 134FBGA | Contains Lead | compliant | RFQ >> |
|
GD25T512MEBARY | GigaDevice Semiconductor (HK) Limited | NOR FLASH | Contains Lead | compliant | RFQ >> |
|
GD25X512MEB2RY | GigaDevice Semiconductor (HK) Limited | NOR FLASH | Contains Lead | compliant | RFQ >> |
|
W66BQ2NQUAGJ | Winbond Electronics | 2GB LPDDR4X, DDP, X32, 1866MHZ, | Contains Lead | compliant | RFQ >> |
|
W66BP2NQUAGJ | Winbond Electronics | 2GB LPDDR4, DDP, X32, 1866MHZ, - | Contains Lead | compliant | RFQ >> |
|
W66BP2NQUAFJ TR | Winbond Electronics | 2GB LPDDR4, DDP, X32, 1600MHZ, - | Contains Lead | compliant | RFQ >> |
|
W66BQ2NQUAFJ TR | Winbond Electronics | 2GB LPDDR4X, DDP, X32, 1600MHZ, | Contains Lead | compliant | RFQ >> |
|
W66BP2NQUAHJ | Winbond Electronics | 2GB LPDDR4, DDP, X32, 2133MHZ, - | Contains Lead | compliant | RFQ >> |
|
W66BQ2NQUAHJ | Winbond Electronics | 2GB LPDDR4X, DDP, X32, 2133MHZ, | Contains Lead | compliant | RFQ >> |
|
W66BQ2NQUAGJ TR | Winbond Electronics | 2GB LPDDR4X, DDP, X32, 1866MHZ, | Contains Lead | compliant | RFQ >> |
|
W66BP2NQUAGJ TR | Winbond Electronics | 2GB LPDDR4, DDP, X32, 1866MHZ, - | Contains Lead | compliant | RFQ >> |
|
W66BQ2NQUAHJ TR | Winbond Electronics | 2GB LPDDR4X, DDP, X32, 2133MHZ, | Contains Lead | compliant | RFQ >> |
|
W66BP2NQUAHJ TR | Winbond Electronics | 2GB LPDDR4, DDP, X32, 2133MHZ, - | Contains Lead | compliant | RFQ >> |
|
GD25T512MEYAGR | GigaDevice Semiconductor (HK) Limited | NOR FLASH | Contains Lead | compliant | RFQ >> |
|
EM16GSEQF-BA000-2 | Delkin Devices, Inc. | IC | Contains Lead | compliant | RFQ >> |
|
W25Q512NWEIN | Winbond Electronics | SPIFLASH, 512M-BIT, 1.8V, 4KB UN | Contains Lead | compliant | RFQ >> |
|
GD5F4GM8UEB2GY | GigaDevice Semiconductor (HK) Limited | NAND FLASH | Contains Lead | compliant | RFQ >> |
|
GD5F4GM8REY2GY | GigaDevice Semiconductor (HK) Limited | NAND FLASH | Contains Lead | compliant | RFQ >> |
 |
W35N04JWTBIC TR | Winbond Electronics | 4G-BIT OCTAL NAND FLASH, 1.8V | Contains Lead | compliant | RFQ >> |
|
W35N04JWTBIF TR | Winbond Electronics | 4G-BIT OCTAL NAND FLASH, 1.8V | Contains Lead | compliant | RFQ >> |
|
GD9FU4G8F3ALGJ | GigaDevice Semiconductor (HK) Limited | NAND FLASH | Contains Lead | compliant | RFQ >> |
|
GD25LT512MEYAGR | GigaDevice Semiconductor (HK) Limited | NOR FLASH | Contains Lead | compliant | RFQ >> |
|
GD9FU4G8F3AMGJ | GigaDevice Semiconductor (HK) Limited | NAND FLASH | Contains Lead | compliant | RFQ >> |
|
E316GSEQF-BA000-2 | Delkin Devices, Inc. | IC | Contains Lead | compliant | RFQ >> |
|
MT53E768M16D1ZW-046 WT:C TR | Micron Technology Inc. | LPDDR4 12GBIT 16 200/264 TFBGA 1 | Contains Lead | compliant | RFQ >> |
|
GD25T512MEFARR | GigaDevice Semiconductor (HK) Limited | NOR FLASH | Contains Lead | compliant | RFQ >> |
|
W25R512JVEIN | Winbond Electronics | RPMC SPIFLASH, 3V, 512M-BIT, DRV | Contains Lead | compliant | RFQ >> |
 |
IME1G16D3EEBG-15EI | Intelligent Memory Ltd. | ECC DDR3, 1GB, 1.5V, 64MX16, 667 | Contains Lead | compliant | RFQ >> |
|
GD55B01GFBIRY | GigaDevice Semiconductor (HK) Limited | NOR FLASH | Contains Lead | compliant | RFQ >> |
|
GD55F01GFBIRY | GigaDevice Semiconductor (HK) Limited | NOR FLASH | Contains Lead | compliant | RFQ >> |
|
MT42L64M32D2HE-18 AAT:D TR | Micron Technology Inc. | IC MEMORY DRAM 2G 134FBGA | Contains Lead | compliant | RFQ >> |
|
MT40A512M16TB-062E IT:R TR | Micron Technology Inc. | DDR4 8G 512MX16 FBGA | Contains Lead | compliant | RFQ >> |
|
MT40A1G8SA-062E IT:R TR | Micron Technology Inc. | DDR4 8G 1GX8 FBGA | Contains Lead | compliant | RFQ >> |
|
GD55B01GEYIGR | GigaDevice Semiconductor (HK) Limited | NOR FLASH | Contains Lead | compliant | RFQ >> |
|
W35N04JWTBIC | Winbond Electronics | 4G-BIT OCTAL NAND FLASH, 1.8V | Contains Lead | compliant | RFQ >> |
|
W35N04JWTBIF | Winbond Electronics | 4G-BIT OCTAL NAND FLASH, 1.8V | Contains Lead | compliant | RFQ >> |
|
GD55B01GFYIGR | GigaDevice Semiconductor (HK) Limited | NOR FLASH | Contains Lead | compliant | RFQ >> |
|
GD55F01GFYIGR | GigaDevice Semiconductor (HK) Limited | NOR FLASH | Contains Lead | compliant | RFQ >> |
|
GD25LT512MEF2RR | GigaDevice Semiconductor (HK) Limited | NOR FLASH | Contains Lead | compliant | RFQ >> |
|
GD25LX512MEBARR | GigaDevice Semiconductor (HK) Limited | NOR FLASH | Contains Lead | compliant | RFQ >> |
|
GD55LB01GFYIGR | GigaDevice Semiconductor (HK) Limited | NOR FLASH | Contains Lead | compliant | RFQ >> |
|
E216GSEQF-BA000-2 | Delkin Devices, Inc. | IC | Contains Lead | compliant | RFQ >> |
|
W66CQ2NQQAFJ | Winbond Electronics | 4GB LPDDR4X, DDP, X32, 1600MHZ, | Contains Lead | compliant | RFQ >> |
|
MT42L64M32D2HE-18 AAT:D | Micron Technology Inc. | IC MEMORY DRAM 2G 134FBGA | Contains Lead | compliant | RFQ >> |
|
GD55B01GFFIRR | GigaDevice Semiconductor (HK) Limited | NOR FLASH | Contains Lead | compliant | RFQ >> |
|
GD55F01GFFIRR | GigaDevice Semiconductor (HK) Limited | NOR FLASH | Contains Lead | compliant | RFQ >> |
